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| SUP85N15-21 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 D TrenchFETr Power MOSFETS D 175_C Junction Temperature rDS(on) (W) ID (A) 85 APPLICATIONS D Primary Side Switch D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives 0.021 @ VGS = 10 V TO-220AB D G DRAIN connected to TAB GDS Top View SUP85N15-21 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 150 "20 85 50 180 50 125 300c 2.4 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient--Free Air Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. Document Number: 72003 S-21715--Rev. A, 07-Oct-02 www.vishay.com Symbol RthJA RthJC Limit 62.5 0.4 Unit _C/W _ 1 SUP85N15-21 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 120 0.0175 0.021 0.042 0.055 S W 150 V 2 4 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 75 V, RL = 0.9 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W VDS = 75 V, VGS = 10 V, ID = 85 A VGS = 0 V, VDS = 25 V, f = 1 MHz 4750 530 220 76 21 26 22 170 40 170 35 250 60 250 ns 110 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms m IF = 85 A, VGS = 0 V 1.0 130 8 0.52 85 180 1.5 200 12 1.2 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72003 S-21715--Rev. A, 07-Oct-02 SUP85N15-21 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 180 VGS = 10 thru 7 V 150 6V I D - Drain Current (A) 120 I D - Drain Current (A) 120 150 180 Vishay Siliconix Transfer Characteristics 90 90 60 5V 4V 0 0 2 4 6 8 10 60 TC = 125_C 30 25_C -55 _C 0 0 1 2 3 4 5 6 7 30 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 180 TC = -55_C r DS(on) - On-Resistance ( W ) 150 g fs - Transconductance (S) 25_C 120 125_C 90 0.04 On-Resistance vs. Drain Current 0.03 0.02 VGS = 10 V 60 0.01 30 0 0 20 40 60 80 100 120 0.00 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 25 50 75 100 125 150 Crss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 75 V ID = 85 A 12 8 4 Coss 0 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) Document Number: 72003 S-21715--Rev. A, 07-Oct-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP85N15-21 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 2.4 r DS(on) - On-Resistance (W) (Normalized) 2.0 1.6 1.2 0.8 0.4 0.0 -50 1 0 VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 10 TJ = 150_C TJ = 25_C -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 190 Drain Source Breakdown vs. Junction Temperature 180 100 V (BR)DSS (V) I Dav (a) 170 ID = 1.0 mA 10 IAV (A) @ TA = 25_C 160 1 150 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 140 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72003 S-21715--Rev. A, 07-Oct-02 SUP85N15-21 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 90 1000 Safe Operating Area Limited by rDS(on) 75 100 I D - Drain Current (A) I D - Drain Current (A) 60 10 ms 100 ms 10 45 1 ms 10 ms 100 ms dc 30 1 15 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 72003 S-21715--Rev. A, 07-Oct-02 www.vishay.com 5 |
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